Electronic structure and magnetism in doped semiconducting half-Heusler compounds
نویسندگان
چکیده
منابع مشابه
Electronic transport properties of electron- and hole-doped semiconducting C1b Heusler compounds: NiTi1−xMxSn (M=Sc, V)
The substitutional series of Heusler compounds NiTi1−xMxSn where M =Sc,V and 0 x 0.2 were synthesized and investigated with respect to their electronic structure and transport properties. The results show the possibility to create n-type and p-type thermoelectrics within one Heusler compound. The electronic structure and transport properties were calculated by all-electron ab initio methods and...
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The Ni-doped ZrCo1−xNixSb half-Heusler compounds were prepared by arc-melting and spark plasma sintering technology. X-ray diffraction analysis results showed that all samples were crystallized in a half-Heusler phase. Thermoelectric properties of ZrCo1−xNixSb compounds were measured from room temperature to 850 K. The electrical conductivity and the absolute value of Seebeck coefficient increa...
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ژورنال
عنوان ژورنال: Journal of Physics: Condensed Matter
سال: 2005
ISSN: 0953-8984,1361-648X
DOI: 10.1088/0953-8984/17/33/008